eprintid: 98791
rev_number: 3
eprint_status: archive
dir: disk0/00/09/87/91
datestamp: 2026-06-19 07:06:43
lastmod: 2026-06-19 07:06:44
status_changed: 2026-06-19 07:06:43
type: article
metadata_visibility: show
creators_name: Jo‘rayev G‘ulomjon, Jo‘rayev G‘ulomjon
creators_name: Toshboyev Olmos, Toshboyev Olmos
creators_name: Qobilov Dilmurod, Qobilov Dilmurod
creators_name: Shaxriyor, Oʻralov
title: YARIMO‘TKAZGICHLAR VA ULARNING FIZIK-KIMYOVIY XOSSALARI.
ispublished: pub
keywords: semiconductor, silicon, germanium, electrical conductivity, doping, electron, hole, p–n junction, band gap.
abstract: To systematize the analysis of crystal structure, physicochemical properties, electrical conductivity mechanisms, and technological applications of semiconductor materials. Comparative analysis was conducted based on solid-state physics, band theory, synthesis of experimental data, and computational modeling (DFT, Drude–Sommerfeld approach). Quantitative evaluation of band gap energies (Si: 1.12 eV, Ge: 0.66 eV), charge carrier mobility, temperature-dependent conductivity, and doping effects for Si, Ge, and compound semiconductors (GaAs, SiC, GaN) was performed. A precise understanding of physicochemical parameters is critical for enhancing semiconductor device performance and advancing wide-bandgap materials and nanotechnologies.
 
date: 2026-06-11
official_url: https://universalconference.us/index.php/icames/article/view/7380
full_text_status: public
publication: INTERNATIONAL CONFERENCE ON ANALYSIS OF MATHEMATICS AND EXACT SCIENCES
volume: 3
number: 2
pagerange: 38-42
citation:   Jo‘rayev G‘ulomjon, Jo‘rayev G‘ulomjon, Toshboyev Olmos, Toshboyev Olmos, Qobilov Dilmurod, Qobilov Dilmurod, Shaxriyor, Oʻralov  (2026) YARIMO‘TKAZGICHLAR VA ULARNING FIZIK-KIMYOVIY XOSSALARI.  INTERNATIONAL CONFERENCE ON ANALYSIS OF MATHEMATICS AND EXACT SCIENCES, 3 (2).  pp. 38-42.      
document_url: https://arxiv.universalpublishings.com/id/eprint/98791/1/38-42.pdf