TY  - JOUR
AV  - public
Y1  - 2026/06/11/
VL  - 3
SP  - 38
A1  - Jo?rayev G?ulomjon, Jo?rayev G?ulomjon
A1  - Toshboyev Olmos, Toshboyev Olmos
A1  - Qobilov Dilmurod, Qobilov Dilmurod
A1  - Shaxriyor, O?ralov
UR  - https://universalconference.us/index.php/icames/article/view/7380
ID  - arxiv98791
EP  - 42
KW  - semiconductor
KW  -  silicon
KW  -  germanium
KW  -  electrical conductivity
KW  -  doping
KW  -  electron
KW  -  hole
KW  -  p?n junction
KW  -  band gap.
JF  - INTERNATIONAL CONFERENCE ON ANALYSIS OF MATHEMATICS AND EXACT SCIENCES
TI  - YARIMO?TKAZGICHLAR VA ULARNING FIZIK-KIMYOVIY XOSSALARI.
N2  - To systematize the analysis of crystal structure, physicochemical properties, electrical conductivity mechanisms, and technological applications of semiconductor materials. Comparative analysis was conducted based on solid-state physics, band theory, synthesis of experimental data, and computational modeling (DFT, Drude?Sommerfeld approach). Quantitative evaluation of band gap energies (Si: 1.12 eV, Ge: 0.66 eV), charge carrier mobility, temperature-dependent conductivity, and doping effects for Si, Ge, and compound semiconductors (GaAs, SiC, GaN) was performed. A precise understanding of physicochemical parameters is critical for enhancing semiconductor device performance and advancing wide-bandgap materials and nanotechnologies.
 
IS  - 2
ER  -