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	bibo:abstract "To systematize the analysis of crystal structure, physicochemical properties, electrical conductivity mechanisms, and technological applications of semiconductor materials. Comparative analysis was conducted based on solid-state physics, band theory, synthesis of experimental data, and computational modeling (DFT, Drude–Sommerfeld approach). Quantitative evaluation of band gap energies (Si: 1.12 eV, Ge: 0.66 eV), charge carrier mobility, temperature-dependent conductivity, and doping effects for Si, Ge, and compound semiconductors (GaAs, SiC, GaN) was performed. A precise understanding of physicochemical parameters is critical for enhancing semiconductor device performance and advancing wide-bandgap materials and nanotechnologies.\r\n&nbsp;"^^xsd:string;
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