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      "uri": "https://arxiv.universalpublishings.com/id/eprint/98791",
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        {
          "name": {
            "honourific": null,
            "family": "Jo\u2018rayev G\u2018ulomjon",
            "given": "Jo\u2018rayev G\u2018ulomjon",
            "lineage": null
          }
        },
        {
          "name": {
            "family": "Toshboyev Olmos",
            "honourific": null,
            "lineage": null,
            "given": "Toshboyev Olmos"
          }
        },
        {
          "name": {
            "family": "Qobilov Dilmurod",
            "honourific": null,
            "lineage": null,
            "given": "Qobilov Dilmurod"
          }
        },
        {
          "name": {
            "honourific": null,
            "family": "Shaxriyor",
            "given": "O\u02bbralov",
            "lineage": null
          }
        }
      ],
      "dir": "disk0/00/09/87/91",
      "pagerange": "38-42",
      "lastmod": "2026-06-19 07:06:44",
      "official_url": "https://universalconference.us/index.php/icames/article/view/7380",
      "abstract": "To systematize the analysis of crystal structure, physicochemical properties, electrical conductivity mechanisms, and technological applications of semiconductor materials. Comparative analysis was conducted based on solid-state physics, band theory, synthesis of experimental data, and computational modeling (DFT, Drude\u2013Sommerfeld approach). Quantitative evaluation of band gap energies (Si: 1.12 eV, Ge: 0.66 eV), charge carrier mobility, temperature-dependent conductivity, and doping effects for Si, Ge, and compound semiconductors (GaAs, SiC, GaN) was performed. A precise understanding of physicochemical parameters is critical for enhancing semiconductor device performance and advancing wide-bandgap materials and nanotechnologies.\r\n ",
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      "number": 2,
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            "pos": 1,
            "uri": "https://arxiv.universalpublishings.com/id/document/20411",
            "docid": 20411,
            "rev_number": 2,
            "security": "public",
            "language": "en",
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            "content": "published",
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      "type": "article",
      "ispublished": "pub",
      "rev_number": 3,
      "publication": "INTERNATIONAL CONFERENCE ON ANALYSIS OF MATHEMATICS AND EXACT SCIENCES",
      "metadata_visibility": "show",
      "eprint_status": "archive",
      "status_changed": "2026-06-19 07:06:43",
      "volume": 3,
      "date": "2026-06-11",
      "datestamp": "2026-06-19 07:06:43",
      "eprintid": 98791,
      "keywords": "semiconductor, silicon, germanium, electrical conductivity, doping, electron, hole, p\u2013n junction, band gap.",
      "title": "YARIMO\u2018TKAZGICHLAR VA ULARNING FIZIK-KIMYOVIY XOSSALARI."
    }