%0 Journal Article
%A Jo‘rayev G‘ulomjon, Jo‘rayev G‘ulomjon
%A Toshboyev Olmos, Toshboyev Olmos
%A Qobilov Dilmurod, Qobilov Dilmurod
%A Shaxriyor, Oʻralov
%D 2026
%F arxiv:98791
%J INTERNATIONAL CONFERENCE ON ANALYSIS OF MATHEMATICS AND EXACT SCIENCES
%K semiconductor, silicon, germanium, electrical conductivity, doping, electron, hole, p–n junction, band gap.
%N 2
%P 38-42
%T YARIMO‘TKAZGICHLAR VA ULARNING FIZIK-KIMYOVIY XOSSALARI.
%U https://arxiv.universalpublishings.com/id/eprint/98791/
%V 3
%X To systematize the analysis of crystal structure, physicochemical properties, electrical conductivity mechanisms, and technological applications of semiconductor materials. Comparative analysis was conducted based on solid-state physics, band theory, synthesis of experimental data, and computational modeling (DFT, Drude–Sommerfeld approach). Quantitative evaluation of band gap energies (Si: 1.12 eV, Ge: 0.66 eV), charge carrier mobility, temperature-dependent conductivity, and doping effects for Si, Ge, and compound semiconductors (GaAs, SiC, GaN) was performed. A precise understanding of physicochemical parameters is critical for enhancing semiconductor device performance and advancing wide-bandgap materials and nanotechnologies.