relation: https://arxiv.universalpublishings.com/id/eprint/98791/
title: YARIMO‘TKAZGICHLAR VA ULARNING FIZIK-KIMYOVIY XOSSALARI.
creator: Jo‘rayev G‘ulomjon, Jo‘rayev G‘ulomjon
creator: Toshboyev Olmos, Toshboyev Olmos
creator: Qobilov Dilmurod, Qobilov Dilmurod
creator: Shaxriyor, Oʻralov
description: To systematize the analysis of crystal structure, physicochemical properties, electrical conductivity mechanisms, and technological applications of semiconductor materials. Comparative analysis was conducted based on solid-state physics, band theory, synthesis of experimental data, and computational modeling (DFT, Drude–Sommerfeld approach). Quantitative evaluation of band gap energies (Si: 1.12 eV, Ge: 0.66 eV), charge carrier mobility, temperature-dependent conductivity, and doping effects for Si, Ge, and compound semiconductors (GaAs, SiC, GaN) was performed. A precise understanding of physicochemical parameters is critical for enhancing semiconductor device performance and advancing wide-bandgap materials and nanotechnologies.   
date: 2026-06-11
type: Maqola
type: NonPeerReviewed
format: application/pdf
language: en
identifier: https://arxiv.universalpublishings.com/id/eprint/98791/1/38-42.pdf
identifier:   Jo‘rayev G‘ulomjon, Jo‘rayev G‘ulomjon, Toshboyev Olmos, Toshboyev Olmos, Qobilov Dilmurod, Qobilov Dilmurod, Shaxriyor, Oʻralov  (2026) YARIMO‘TKAZGICHLAR VA ULARNING FIZIK-KIMYOVIY XOSSALARI.  INTERNATIONAL CONFERENCE ON ANALYSIS OF MATHEMATICS AND EXACT SCIENCES, 3 (2).  pp. 38-42.      
relation: https://universalconference.us/index.php/icames/article/view/7380