eprintid: 95163
rev_number: 3
eprint_status: archive
dir: disk0/00/09/51/63
datestamp: 2026-06-19 04:32:32
lastmod: 2026-06-19 04:32:32
status_changed: 2026-06-19 04:32:32
type: article
metadata_visibility: show
creators_name: I.M.Soliyev, I.M.Soliyev
title: Ge2, GaAs va ZnSe ning Bi dagi eruvchanligining haroratga bog‘liqligini taxlil qilish
ispublished: pub
keywords: Suyuq fazadan epitaksiyalanish, qattiq qorishmalar, vismut eritmasi, molekulyar diffuziya, Ge₂, GaAs, ZnSe, eruvchanlik, kristallanish, to‘yingan eritma
abstract: Ushbu maqolada Bi (vismut) asosidagi aralashma eritmalar yordamida qattiq qorishmalarni suyuq fazadan epitaksiyalash jarayoni o‘rganildi. Asosiy e’tibor (Ge₂)₁₋ₓ₋ᵧ(ZnSe)₁₋ₓ(GaAs₁₋δBiδ)ᵧ turdagi qattiq qorishmalarning o‘sish sharoitlari va struktura xossalariga qaratildi. Aralashma eritmada komponentlarning eruvchanligi, eritma tarkibi va o‘sish tezligining qatlam strukturasiga ta’siri eksperimental tarzda tahlil qilindi. Tadqiqotlar vismut eritmasida Ge₂, GaAs va ZnSe ning molekulyar diffuziya asosida o‘sishini va aralashma eritmaning to‘yinganlik darajasining muhimligini ko‘rsatdi. Harorat, sovitish tezligi va substratlar orasidagi masofa kabi texnologik parametrlarning epitaksiyalanish jarayoniga ta’siri baholandi.
date: 2025-09-05
official_url: https://universalconference.us/index.php/pssir/article/view/5132
full_text_status: public
publication: PROBLEMS AND SOLUTIONS OF SCIENTIFIC AND INNOVATIVE RESEARCH
volume: 2
number: 8
pagerange: 77-79
citation:   I.M.Soliyev, I.M.Soliyev  (2025) Ge2, GaAs va ZnSe ning Bi dagi eruvchanligining haroratga bog‘liqligini taxlil qilish.  PROBLEMS AND SOLUTIONS OF SCIENTIFIC AND INNOVATIVE RESEARCH, 2 (8).  pp. 77-79.      
document_url: https://arxiv.universalpublishings.com/id/eprint/95163/1/77-79.pdf