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            "eprintid": 95163,
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            "uri": "https://arxiv.universalpublishings.com/id/document/16790",
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      "number": 8,
      "full_text_status": "public",
      "rev_number": 3,
      "ispublished": "pub",
      "eprint_status": "archive",
      "metadata_visibility": "show",
      "publication": "PROBLEMS AND SOLUTIONS OF SCIENTIFIC AND INNOVATIVE RESEARCH",
      "volume": 2,
      "status_changed": "2026-06-19 04:32:32",
      "date": "2025-09-05",
      "eprintid": 95163,
      "datestamp": "2026-06-19 04:32:32",
      "keywords": "Suyuq fazadan epitaksiyalanish, qattiq qorishmalar, vismut eritmasi, molekulyar diffuziya, Ge\u2082, GaAs, ZnSe, eruvchanlik, kristallanish, to\u2018yingan eritma",
      "title": "Ge2, GaAs va ZnSe ning Bi dagi eruvchanligining haroratga bog\u2018liqligini taxlil qilish",
      "uri": "https://arxiv.universalpublishings.com/id/eprint/95163",
      "creators": [
        {
          "name": {
            "lineage": null,
            "given": "I.M.Soliyev",
            "family": "I.M.Soliyev",
            "honourific": null
          }
        }
      ],
      "lastmod": "2026-06-19 04:32:32",
      "dir": "disk0/00/09/51/63",
      "pagerange": "77-79",
      "official_url": "https://universalconference.us/index.php/pssir/article/view/5132",
      "abstract": "Ushbu maqolada Bi (vismut) asosidagi aralashma eritmalar yordamida qattiq qorishmalarni suyuq fazadan epitaksiyalash jarayoni o\u2018rganildi. Asosiy e\u2019tibor (Ge\u2082)\u2081\u208b\u2093\u208b\u1d67(ZnSe)\u2081\u208b\u2093(GaAs\u2081\u208b\u03b4Bi\u03b4)\u1d67 turdagi qattiq qorishmalarning o\u2018sish sharoitlari va struktura xossalariga qaratildi. Aralashma eritmada komponentlarning eruvchanligi, eritma tarkibi va o\u2018sish tezligining qatlam strukturasiga ta\u2019siri eksperimental tarzda tahlil qilindi. Tadqiqotlar vismut eritmasida Ge\u2082, GaAs va ZnSe ning molekulyar diffuziya asosida o\u2018sishini va aralashma eritmaning to\u2018yinganlik darajasining muhimligini ko\u2018rsatdi. Harorat, sovitish tezligi va substratlar orasidagi masofa kabi texnologik parametrlarning epitaksiyalanish jarayoniga ta\u2019siri baholandi."
    }