relation: https://arxiv.universalpublishings.com/id/eprint/95163/
title: Ge2, GaAs va ZnSe ning Bi dagi eruvchanligining haroratga bog‘liqligini taxlil qilish
creator: I.M.Soliyev, I.M.Soliyev
description: Ushbu maqolada Bi (vismut) asosidagi aralashma eritmalar yordamida qattiq qorishmalarni suyuq fazadan epitaksiyalash jarayoni o‘rganildi. Asosiy e’tibor (Ge₂)₁₋ₓ₋ᵧ(ZnSe)₁₋ₓ(GaAs₁₋δBiδ)ᵧ turdagi qattiq qorishmalarning o‘sish sharoitlari va struktura xossalariga qaratildi. Aralashma eritmada komponentlarning eruvchanligi, eritma tarkibi va o‘sish tezligining qatlam strukturasiga ta’siri eksperimental tarzda tahlil qilindi. Tadqiqotlar vismut eritmasida Ge₂, GaAs va ZnSe ning molekulyar diffuziya asosida o‘sishini va aralashma eritmaning to‘yinganlik darajasining muhimligini ko‘rsatdi. Harorat, sovitish tezligi va substratlar orasidagi masofa kabi texnologik parametrlarning epitaksiyalanish jarayoniga ta’siri baholandi.
date: 2025-09-05
type: Maqola
type: NonPeerReviewed
format: application/pdf
language: en
identifier: https://arxiv.universalpublishings.com/id/eprint/95163/1/77-79.pdf
identifier:   I.M.Soliyev, I.M.Soliyev  (2025) Ge2, GaAs va ZnSe ning Bi dagi eruvchanligining haroratga bog‘liqligini taxlil qilish.  PROBLEMS AND SOLUTIONS OF SCIENTIFIC AND INNOVATIVE RESEARCH, 2 (8).  pp. 77-79.      
relation: https://universalconference.us/index.php/pssir/article/view/5132