<mets:mets LABEL="Eprints Item" xsi:schemaLocation="http://www.loc.gov/METS/ http://www.loc.gov/standards/mets/mets.xsd http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-3.xsd" OBJID="eprint_93493" xmlns:mets="http://www.loc.gov/METS/" xmlns:mods="http://www.loc.gov/mods/v3" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"><mets:metsHdr CREATEDATE="2026-11-06T18:46:07Z"><mets:agent ROLE="CUSTODIAN" TYPE="ORGANIZATION"><mets:name>Arxiv Universal Publishings</mets:name></mets:agent></mets:metsHdr><mets:dmdSec ID="DMD_eprint_93493_mods"><mets:mdWrap MDTYPE="MODS"><mets:xmlData><mods:titleInfo><mods:title>MIKRO VA OPTOELEKTRON ASBOBSOZLIKDA  NANOTUZILMALARNING QO'LLANILISHI</mods:title></mods:titleInfo><mods:name type="personal"><mods:namePart type="given">Asranov Oyatillo</mods:namePart><mods:namePart type="family">Asranov Oyatillo</mods:namePart><mods:role><mods:roleTerm type="text">author</mods:roleTerm></mods:role></mods:name><mods:abstract>Mikro va optoelektronika sohalari zamonaviy texnologiyaning eng tez rivojlanayotgan yo‘nalishlaridan biri hisoblanadi. Ushbu sohada qurilmalarni kichraytirish, samaradorlikni oshirish va energiya tejamkorligini ta’minlash doimiy talabdir. Nanotuzilmalar, ya’ni o‘lchami 1-100 nanometr atrofida bo‘lgan materiallar, mikro va optoelektron asbobsozlikda innovatsion yechim sifatida muhim o‘rin egallaydi. Ularning o‘ziga xos fizik va kimyoviy xususiyatlari - yuqori elektr o'tkazuvchanlik, termal barqarorlik, mexanik mustahkamlik, katta yuzaga ega bo‘lishi - an’anaviy materiallarga nisbatan sezilarli afzalliklar beradi.</mods:abstract><mods:originInfo><mods:dateIssued encoding="iso8601">2026-04-15</mods:dateIssued></mods:originInfo><mods:genre>Maqola</mods:genre></mets:xmlData></mets:mdWrap></mets:dmdSec><mets:amdSec ID="TMD_eprint_93493"><mets:rightsMD ID="rights_eprint_93493_mods"><mets:mdWrap MDTYPE="MODS"><mets:xmlData><mods:useAndReproduction>
<p xmlns="http://www.w3.org/1999/xhtml"><strong>For work being deposited by its own author:</strong>
In self-archiving this collection of files and associated bibliographic
metadata, I grant Arxiv Universal Publishings the right to store
them and to make them permanently available publicly for free on-line.
I declare that this material is my own intellectual property and I
understand that Arxiv Universal Publishings does not assume any
responsibility if there is any breach of copyright in distributing these
files or metadata. (All authors are urged to prominently assert their
copyright on the title page of their work.)</p>

<p xmlns="http://www.w3.org/1999/xhtml"><strong>For work being deposited by someone other than its
author:</strong> I hereby declare that the collection of files and
associated bibliographic metadata that I am archiving at
Arxiv Universal Publishings is in the public domain. If this is
not the case, I accept full responsibility for any breach of copyright
that distributing these files or metadata may entail.</p>

<p xmlns="http://www.w3.org/1999/xhtml">Clicking on the <em>Deposit Item Now</em> button indicates your agreement to these
terms.</p>
    </mods:useAndReproduction></mets:xmlData></mets:mdWrap></mets:rightsMD></mets:amdSec><mets:fileSec><mets:fileGrp USE="reference"><mets:file MIMETYPE="application/pdf" SIZE="160568" OWNERID="https://arxiv.universalpublishings.com/id/eprint/93493/1/84-85.pdf" ID="eprint_93493_15129_1"><mets:FLocat LOCTYPE="URL" xlink:type="simple" xlink:href="https://arxiv.universalpublishings.com/id/eprint/93493/1/84-85.pdf"></mets:FLocat></mets:file></mets:fileGrp></mets:fileSec><mets:structMap><mets:div DMDID="DMD_eprint_93493_mods" ADMID="TMD_eprint_93493"><mets:fptr FILEID="eprint_93493_document_15129_1"></mets:fptr></mets:div></mets:structMap></mets:mets>