<mods:mods xsi:schemaLocation="http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-3.xsd" version="3.3" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:mods="http://www.loc.gov/mods/v3"><mods:titleInfo><mods:title>YARIMOʻTKAZGICHLARDA ELEKTR MAYDONINING HOSIL BOʻLISHI VA UNI BOSHQARISHNING ZAMONAVIY METODLARI</mods:title></mods:titleInfo><mods:name type="personal"><mods:namePart type="given">Boymurotov Bahrom</mods:namePart><mods:namePart type="family">Baxodirovich</mods:namePart><mods:role><mods:roleTerm type="text">author</mods:roleTerm></mods:role></mods:name><mods:name type="personal"><mods:namePart type="given"></mods:namePart><mods:namePart type="family">D.I.Kamalova</mods:namePart><mods:role><mods:roleTerm type="text">author</mods:roleTerm></mods:role></mods:name><mods:abstract>Ushbu ilmiy maqolada yarimoʻtkazgichlarda elektr maydonining hosil bo‘lish jarayoni, uning fizikasiy asoslari, energetik zonalardagi potensial to‘siqlar va zaryad tashuvchilarning taqsimlanishi tahlil qilinadi. Shuningdek, elektr maydonini boshqarishning zamonaviy usullari — doping texnologiyasi, PN-o‘tishlarning shakllanishi, MOS tranzistorlarda gate potensialining roli, kvant o‘tish hodisalari va nanoelektron qurilmalar misolida ko‘rib chiqiladi. Maqola zamonaviy mikroelektronika, nanotexnologiyalar va integral sxemalar ishlab chiqarishdagi dolzarb masalalarni qamrab oladi.</mods:abstract><mods:originInfo><mods:dateIssued encoding="iso8601">2026-02-13</mods:dateIssued></mods:originInfo><mods:originInfo><mods:publisher>Research Science and Innovation house</mods:publisher></mods:originInfo><mods:genre>Maqola</mods:genre></mods:mods>