<mets:mets OBJID="eprint_70433" LABEL="Eprints Item" xsi:schemaLocation="http://www.loc.gov/METS/ http://www.loc.gov/standards/mets/mets.xsd http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-3.xsd" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:mods="http://www.loc.gov/mods/v3" xmlns:mets="http://www.loc.gov/METS/"><mets:metsHdr CREATEDATE="2026-06-16T21:01:10Z"><mets:agent ROLE="CUSTODIAN" TYPE="ORGANIZATION"><mets:name>Arxiv Universal Publishings</mets:name></mets:agent></mets:metsHdr><mets:dmdSec ID="DMD_eprint_70433_mods"><mets:mdWrap MDTYPE="MODS"><mets:xmlData><mods:titleInfo><mods:title>КОМПЛЕКСНОЕ ЛЕГИРОВАНИЕ КРЕМНИЯ МАРГАНЦЕМ И ЭЛЕМЕНТАМИ VI ГРУППЫ: ВЛИЯНИЕ НА ЭЛЕКТРОФИЗИЧЕСКИЕ СВОЙСТВА</mods:title></mods:titleInfo><mods:name type="personal"><mods:namePart type="given">Эшқораев Aбдуқодир</mods:namePart><mods:namePart type="family">Искандарович</mods:namePart><mods:role><mods:roleTerm type="text">author</mods:roleTerm></mods:role></mods:name><mods:abstract>В современном развитии микро- и наноэлектроники особое внимание уделяется модификации кремния – основного материала для производства полупроводниковых приборов. В последние десятилетия интерес исследователей значительно сместился от традиционного легирования бором и фосфором к более сложным схемам, предполагающим одновременное внедрение нескольких примесных элементов.</mods:abstract><mods:originInfo><mods:dateIssued encoding="iso8601">2025-10-06</mods:dateIssued></mods:originInfo><mods:originInfo><mods:publisher>"XXI ASRDA INNOVATSION TEXNOLOGIYALAR, FAN VA TAʼLIM TARAQQIYOTIDAGI DOLZARB MUAMMOLAR" nomli respublika ilmiy-amaliy konferensiyasi</mods:publisher></mods:originInfo><mods:genre>Maqola</mods:genre></mets:xmlData></mets:mdWrap></mets:dmdSec><mets:amdSec ID="TMD_eprint_70433"><mets:rightsMD ID="rights_eprint_70433_mods"><mets:mdWrap MDTYPE="MODS"><mets:xmlData><mods:useAndReproduction>
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