eprintid: 66766
rev_number: 1
eprint_status: archive
userid: 1
dir: disk0/00/06/67/66
datestamp: 2026-05-26 15:56:39
lastmod: 2026-05-26 15:56:39
status_changed: 2026-05-26 15:56:39
type: article
metadata_visibility: show
sword_depositor: 1
creators_name: Matyoqubova.Sh.G', 
creators_name: Xamidova.D.M, 
creators_name: Abduvoxobova.M.O', 
creators_name: Boboyev.A.Y, 
creators_name: Xakimov.A.X, 
title: OBTAINING A HIGH-PERFORMANCE SEMICONDUCTOR USING A FLOW OF NEUTRONS
ispublished: pub
subjects: yarimo‘tkazgich, neytronlar oqimi, solishtirma qarshilik, zaryad tashuvchilar, konsentratsiya, harakatchanlik.
keywords: yarimo‘tkazgich, neytronlar oqimi, solishtirma qarshilik, zaryad tashuvchilar, konsentratsiya, harakatchanlik.
note: Imported from MJST Journal (OAI id oai:ojs.pkp.sfu.ca:article/7378)
abstract: In this article, we will consider the process of obtaining high-impedance semiconductor materials using a neutron flux and the study of their electrical properties. In particular, we will analyze such important parameters as electrical resistance, charge carrier concentration and their mobility in semiconductors. We will determine that nuclear reactions occurring in the semiconductor crystal lattice as a result of neutron irradiation lead to a change in the electrical properties of the material. The results of the research show that the possibilities of obtaining high-impedance semiconductors and their application in modern electronic devices have been further expanded.
date: 2026-05-12
date_type: published
publisher: Center for Tech and Media Research
official_url: https://mjstjournal.com/index.php/mjst/article/view/7378
id_number: oai:ojs.pkp.sfu.ca:article/7378
full_text_status: none
publication: Multidisciplinary Journal of Science and Technology
citation:   Matyoqubova.Sh.G', Xamidova.D.M, Abduvoxobova.M.O', Boboyev.A.Y, Xakimov.A.X  (2026) OBTAINING A HIGH-PERFORMANCE SEMICONDUCTOR USING A FLOW OF NEUTRONS.  Multidisciplinary Journal of Science and Technology.