eprintid: 63201
rev_number: 2
eprint_status: archive
userid: 1
dir: disk0/00/06/32/01
datestamp: 2026-05-26 15:53:49
lastmod: 2026-06-13 20:41:11
status_changed: 2026-05-26 15:53:49
type: article
metadata_visibility: show
sword_depositor: 1
creators_name: Jakhangir, Mirzaraimov
creators_name: Ismoil, Saydoqulov
title: DEPENDENCE OF THE RESIDENCE TIME OF CHARGE CARRIERS ON OXYGEN ATOMS IN SILICON DOPED WITH COPPER AND IRIDIUM.
ispublished: pub
subjects: r-radiation, charge charge life time, temperature, energy level, copper, iridium, chemical, Fermi level, cooling rate,
keywords: r-radiation, charge charge life time, temperature, energy level, copper, iridium, chemical, Fermi level, cooling rate,
note: Imported from MJST Journal (OAI id oai:ojs.pkp.sfu.ca:article/5429)
abstract: The dependence of the concentration of copper and Iridium atoms in monocrystalline silicon on the residence time of charge carriers (τ) and the rate of cooling after diffusion has been studied. Compensated p-Si<B,P,Su>, p-Si<B,P,Ir> and P-Si<B,P> samples τ  » 90 s irradiated over time. At the same time, it is observed that the change in the concentration of charge carriers in the irradiated Silicon sample depends on the amount of kilorad, which means that the change in its conductivity in the studied samples is due to micro-nobircinism.
date: 2025-10-30
date_type: published
publisher: Center for Tech and Media Research
official_url: https://mjstjournal.com/index.php/mjst/article/view/5429
id_number: oai:ojs.pkp.sfu.ca:article/5429
full_text_status: public
publication: Multidisciplinary Journal of Science and Technology
citation:   Jakhangir, Mirzaraimov, Ismoil, Saydoqulov  (2025) DEPENDENCE OF THE RESIDENCE TIME OF CHARGE CARRIERS ON OXYGEN ATOMS IN SILICON DOPED WITH COPPER AND IRIDIUM.  Multidisciplinary Journal of Science and Technology.       
document_url: https://arxiv.universalpublishings.com/id/eprint/63201/1/5429_11758.pdf