TY  - JOUR
PB  - Center for Tech and Media Research
KW  - r-radiation
KW  -  charge charge life time
KW  -  temperature
KW  -  energy level
KW  -  copper
KW  -  iridium
KW  -  chemical
KW  -  Fermi level
KW  -  cooling rate
N1  - Imported from MJST Journal (OAI id oai:ojs.pkp.sfu.ca:article/5429)
ID  - arxiv63201
N2  - The dependence of the concentration of copper and Iridium atoms in monocrystalline silicon on the residence time of charge carriers (?) and the rate of cooling after diffusion has been studied. Compensated p-Si<B,P,Su>, p-Si<B,P,Ir> and P-Si<B,P> samples ?  » 90 s irradiated over time. At the same time, it is observed that the change in the concentration of charge carriers in the irradiated Silicon sample depends on the amount of kilorad, which means that the change in its conductivity in the studied samples is due to micro-nobircinism.
Y1  - 2025/10/30/
JF  - Multidisciplinary Journal of Science and Technology
TI  - DEPENDENCE OF THE RESIDENCE TIME OF CHARGE CARRIERS ON OXYGEN ATOMS IN SILICON DOPED WITH COPPER AND IRIDIUM.
A1  - Jakhangir, Mirzaraimov
A1  - Ismoil, Saydoqulov
AV  - public
UR  - https://mjstjournal.com/index.php/mjst/article/view/5429
ER  -