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primary topic: DEPENDENCE OF THE RESIDENCE TIME OF CHARGE CARRIERS ON OXYGEN ATOMS IN SILICON DOPED WITH COPPER AND IRIDIUM.

DEPENDENCE OF THE RESIDENCE TIME OF CHARGE CARRIERS ON OXYGEN ATOMS IN SILICON DOPED WITH COPPER AND IRIDIUM.
type: AcademicArticle
type: Article
abstract: The dependence of the concentration of copper and Iridium atoms in monocrystalline silicon on the residence time of charge carriers (τ) and the rate of cooling after diffusion has been studied. Compensated p-Si<B,P,Su>, p-Si<B,P,Ir> and P-Si<B,P> samples τ » 90 s irradiated over time. At the same time, it is observed that the change in the concentration of charge carriers in the irradiated Silicon sample depends on the amount of kilorad, which means that the change in its conductivity in the studied samples is due to micro-nobircinism.
date: 2025-10-30
status: published
author list: authors
type: EPrint
type: ArticleEPrint
is part of: repository
has document: DEPENDENCE OF THE RESIDENCE TIME OF CHARGE CARRIERS ON OXYGEN ATOMS IN SILICON DOPED WITH COPPER AND IRIDIUM. (PDF)

DEPENDENCE OF THE RESIDENCE TIME OF CHARGE CARRIERS ON OXYGEN ATOMS IN SILICON DOPED WITH COPPER AND IRIDIUM. (PDF)
type: Document
has file: main.bin
has part: main.bin
has file: 5429_11758.pdf
has part: 5429_11758.pdf

Center for Tech and Media Research
type: Organization

Multidisciplinary Journal of Science and Technology
type: Collection

Saydoqulov Ismoil
type: Person
given name: Saydoqulov
family name: Ismoil

Mirzaraimov Jakhangir
type: Person
given name: Mirzaraimov
family name: Jakhangir

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primary topic: DEPENDENCE OF THE RESIDENCE TIME OF CHARGE CARRIERS ON OXYGEN ATOMS IN SILICON DOPED WITH COPPER AND IRIDIUM.