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	dc:format "text/html";
	dc:title "HTML Summary of #59282 \n\nGe1-x Snx YARIMO‘TKAZGICHLI QATTIQ QORISHMA ZONA TUZILISHIN XUSUSIYATLARINI O‘RGANISH\n\n";
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	bibo:abstract "Ushbu maqolada Ge₁₋ₓSnₓ yarimo‘tkazgichli qattiq qorishmasining zona tuzilishi xususiyatlari zichlik funksional nazariyasi (DFT) va k·p modeli yordamida o‘rganildi. Ge va Sn atomlari nisbati o‘zgarishi bilan qorishmaning elektron tuzilishi, energiya zonalari, taqiqlangan zona kengligi va panjara doimiysi tahlil qilindi. Hisoblashlar Quantum ESPRESSO dasturida amalga oshirilib, Ge₀.₉₇Sn₀.₀₃ qotishmasi uchun taqiqlangan zona kengligi 0,58 eV ga kamaygani aniqlandi. Sn konsentrasiyasining oshishi bilan taqiqlangan zona torayishi va panjara doimiysining ortishi kuzatildi. Natijalar Ge₁₋ₓSnₓ qorishmalarining infraqizil diapazonli optoelektronika va fotonika qurilmalarida qo‘llanilishi uchun istiqbolli ekanligini ko‘rsatdi. Tadqiqot optoelektron qurilmalar va lazerlar ishlab chiqarishda ilmiy va amaliy ahamiyatga ega."^^xsd:string;
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	foaf:name "Center for Tech and Media Research"^^xsd:string;
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	foaf:familyName "Polvonovna"^^xsd:string;
	foaf:givenName "Asatova Umida"^^xsd:string;
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	foaf:familyName "Ro‘zmetovna"^^xsd:string;
	foaf:givenName "Jumaniyozova Darmonjon"^^xsd:string;
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