<mets:mets xsi:schemaLocation="http://www.loc.gov/METS/ http://www.loc.gov/standards/mets/mets.xsd http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-3.xsd" LABEL="Eprints Item" OBJID="eprint_55726" xmlns:mets="http://www.loc.gov/METS/" xmlns:mods="http://www.loc.gov/mods/v3" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"><mets:metsHdr CREATEDATE="2026-06-03T11:57:06Z"><mets:agent ROLE="CUSTODIAN" TYPE="ORGANIZATION"><mets:name>Arxiv Universal Publishings</mets:name></mets:agent></mets:metsHdr><mets:dmdSec ID="DMD_eprint_55726_mods"><mets:mdWrap MDTYPE="MODS"><mets:xmlData><mods:titleInfo><mods:title>ОПРЕДЕЛЕНИЯ ШИРИНА ЗАПРЕШЕННЫЙ ЗОНЫ ГЕРМАНИЯ</mods:title></mods:titleInfo><mods:name type="personal"><mods:namePart type="given">Али</mods:namePart><mods:namePart type="family">Абдреймов</mods:namePart><mods:role><mods:roleTerm type="text">author</mods:roleTerm></mods:role></mods:name><mods:name type="personal"><mods:namePart type="given">Данияр</mods:namePart><mods:namePart type="family">Мадияров</mods:namePart><mods:role><mods:roleTerm type="text">author</mods:roleTerm></mods:role></mods:name><mods:name type="personal"><mods:namePart type="given">Саятхан</mods:namePart><mods:namePart type="family">Ибраймова</mods:namePart><mods:role><mods:roleTerm type="text">author</mods:roleTerm></mods:role></mods:name><mods:name type="personal"><mods:namePart type="given">Аманлық</mods:namePart><mods:namePart type="family">Далибаев</mods:namePart><mods:role><mods:roleTerm type="text">author</mods:roleTerm></mods:role></mods:name><mods:abstract>Knowledge of the parameters characterizing any diodes or diode structures, and knowledge of the method of their analysis is one of the most important issues in semiconductor electronics, radio electronics, and telecommunications. The study of the causes of uneven current flow and its negative impact on performance in the production of semiconductor devices and the study of methods for solving them is one of the main problems of semiconductor electronics and is an urgent problem at the present time. The band gap of semiconductors has been calculated by several scientists, but differences in their values ​ ​ exist to within a few hundredths of an accuracy. In this article, the semiconductor structure of Ge was taken as an object of study and the band gap of germanium was determined. We determined the voltage drop across an undoped Ge crystal depending on temperature when a constant current passes through the crystal, calculated the conductivity, and determined the band gap Eg of germanium</mods:abstract><mods:originInfo><mods:dateIssued encoding="iso8601">2024-11-28</mods:dateIssued></mods:originInfo><mods:originInfo><mods:publisher>Center for Tech and Media Research</mods:publisher></mods:originInfo><mods:genre>Maqola</mods:genre></mets:xmlData></mets:mdWrap></mets:dmdSec><mets:amdSec ID="TMD_eprint_55726"><mets:rightsMD ID="rights_eprint_55726_mods"><mets:mdWrap MDTYPE="MODS"><mets:xmlData><mods:useAndReproduction>
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