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      "date": "2024-11-28",
      "uri": "https://arxiv.universalpublishings.com/id/eprint/55726",
      "abstract": "Knowledge of the parameters characterizing any diodes or diode structures, and knowledge of the method of their analysis is one of the most important issues in semiconductor electronics, radio electronics, and telecommunications. The study of the causes of uneven current flow and its negative impact on performance in the production of semiconductor devices and the study of methods for solving them is one of the main problems of semiconductor electronics and is an urgent problem at the present time. The band gap of semiconductors has been calculated by several scientists, but differences in their values \u200b \u200b exist to within a few hundredths of an accuracy. In this article, the semiconductor structure of Ge was taken as an object of study and the band gap of germanium was determined. We determined the voltage drop across an undoped Ge crystal depending on temperature when a constant current passes through the crystal, calculated the conductivity, and determined the band gap Eg of germanium",
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      "publication": "Multidisciplinary Journal of Science and Technology",
      "publisher": "Center for Tech and Media Research",
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